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Testing #1

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6 changes: 5 additions & 1 deletion experiment/aim.md
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### Aim of the experiment
### To study the performance characteristics of SCR.

### To study the performance characteristics of IGBT.

### To study the performance characteristics of MOSFET.
2 changes: 1 addition & 1 deletion experiment/experiment-name.md
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## Experiment name
## Characteristics of controlled switching power devices
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221 changes: 205 additions & 16 deletions experiment/posttest.json
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"version": 2.0,
"questions": [
{
"question": "This is a Sample Question 1?",
"question": "1. In SCR, the magnitude of latching current (I<sub>L</sub>) compared to holding current (I<sub>H</sub>) is:",
"answers": {
"a": "Higher",
"b": "Lower",
"c": "Equal",
"d": "Negligible"
},
"explanations": {
"a": "Explanation 1: The latching current is always higher than the holding current.",
"b": "Explanation 2",
"c": "Explanation 3",
"d": "Explanation 4"
},
"correctAnswer": "a",
"difficulty": "beginner"
},

{
"question": "2. The v-i characteristics of SCR is a plot between:",
"answers": {
"a": "Gate voltage (v<sub>g</sub>)-vs-Anode Current (i<sub>A</sub>)",
"b": "Anode-to-Cathode voltage (v<sub>AK</sub>)-vs-Anode Current (i<sub>A</sub>)",
"c": "Anode-to-Cathode voltage (v<sub>AK</sub>)-vs-Gate Current (I<sub>g</sub>)",
"d": "Gate voltage (v<sub>g</sub>)-vs-Gate Current (I<sub>g</sub>)"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2: v-i characteristics shows the relation between the voltage across anode-to-cathode and the anode current.",
"c": "Explanation 3",
"d": "Explanation 4"
},
"correctAnswer": "b",
"difficulty": "beginner"
},

{

"question": "3. The minimum value of anode current (i<sub>A</sub>) below which the SCR turns-OFF is called the",
"answers": {
"a": "Peak anode current",
"b": "Latching current",
"c": "Holding current",
"d": "Forward breakover current"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 3: Holding current is the minimum current required to keep SCR in conduction mode.",
"d": "Explanation 4"
},
"correctAnswer": "c",
"difficulty": "beginner"
},

{

"question": "4. Under forward blocking state, the three junctions of the SCR (J<sub>1</sub>, J<sub>2</sub> and J<sub>3</sub>) are in which states?<br><center><img src='images/pos2.png' height='300px'></center><br>",
"answers": {
"a": "All are forward biased",
"b": "All are reverse biased",
"c": "'J<sub>1</sub>, J<sub>3</sub>' are forward biased while 'J<sub>2</sub>' is reverse biased",
"d": "'J<sub>1</sub>, J<sub>2</sub>' are forward biased while 'J<sub>3</sub>' is reverse biased"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 3: During forward blocking J<sub>1</sub> and J<sub>2</sub> are forward biased because a positive Anode-to-Cathode voltage is applied. Whereas J<sub>2</sub> is reverse biased due to the absence of gate current.",
"d": "Explanation 4"
},
"correctAnswer": "c",
"difficulty": "beginner"
},

{
"question": "5. A SCR is triggered using a gate current. After sometime the gate signal is stopped. What is the status of SCR?",
"answers": {
"a": "SCR stops conducting.",
"b": "SCR goes into reverse breakdown.",
"c": "SCR continues to conduct if anode current is maintained above latching current.",
"d": "SCR continues to conduct if anode current is maintained above holding current."
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 3",
"d": "Explanation 4: SCR is a semi-controlled device i.e. once turned- ON (by gate current), it continues conducting even when gate pulse is removed (provided anode current is greater than the holding current)."
},
"correctAnswer": "d",
"difficulty": "beginner"
},

{

"question": "6. A forward biased MOSFET comes into ON-state by?",
"answers": {
"a": "Allowing Drain current (I<sub>D</sub>)",
"b": "Applying Drain-to-Source voltage (V<sub>DS</sub>)",
"c": "Applying Gate-to-Source voltage (V<sub>GS</sub>)",
"d": "Allowing Gate current (I<sub>G</sub>)"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 3: MOSFET is a voltage controlled device. Applying a positive Gate-to-Source voltage turns- ON the MOSFET.",
"d": "Explanation 4"
},
"correctAnswer": "c",
"difficulty": "beginner"
},

{

"question": "7. In comparison to IGBT the losses in MOSFET are?",
"answers": {
"a": "Lower",
"b": "Higher",
"c": "Almost equal",
"d": "Double"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2: IGBT has lower conduction losses compared to MOSFET.",
"c": "Explanation 3",
"d": "Explanation 4"
},
"correctAnswer": "b",
"difficulty": "beginner"
},

{
"question": "8. Reliable method for firing an SCR is?",
"answers": {
"a": "High dv/dt",
"b": "Continuous gate signal",
"c": "Firing pulses",
"d": "High di/dt"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 3: SCR is a unidirectional device and allows current to flow only from Anode to Cathode when sufficient Gate current or firing pulses is applied.",
"d": "Explanation 4"
},
"correctAnswer": "c",
"difficulty": "beginner"
},

{
"question": "9. In practice, the correct method of turning-ON a SCR is?",
"answers": {
"a": "Increasing the anode-to-cathode voltage (v<sub>AK</sub>) till it reaches a value equal to or above forward breakover voltage (v<sub>BO</sub>).",
"b": "The anode-to-cathode voltage (v<sub>AK</sub>) is maintained below the breakover voltage (v<sub>BO</sub>) and a positive voltage between the gate and cathode (V<sub>g</sub>) is applied across SCR.",
"c": "Increasing the anode-to-cathode voltage (v<sub>AK</sub>) till the anode current (i<sub>A</sub>) reaches above holding current (I<sub>H</sub>).",
"d": "Positive anode-to-cathode voltage (v<sub>AK</sub>) automatically turns- ON the SCR."
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2: SCR is turned- ON by forward biasing it and giving it sufficient gate current.",
"c": "Explanation 3",
"d": "Explanation 4"
},
"correctAnswer": "b",
"difficulty": "beginner"
},

{
"question": "10. How can a conducting SCR be turned-OFF?",
"answers": {
"a": "answer1",
"b": "answer2",
"c": "answer3",
"d": "answer4"
"a": "By application of negative anode current (i<sub>A</sub>) or negative anode-to-cathode voltage (v<sub>AK</sub>).",
"b": "By application of negative gate current (I<sub>g</sub>).",
"c": "By reducing the gate current (I<sub>g</sub>) to zero.",
"d": "All of the above methods are correct."
},
"explanations": {
"a": "Explanation 1 <a href='www.google.com'>here</a>",
"a": "Explanation 1: Applying negative anode current or negative anode-to-cathode voltage reverse biases the SCR, turning it OFF.",
"b": "Explanation 2",
"c": "Explanation 2",
"d": "Explanation 2"
"c": "Explanation 3",
"d": "Explanation 4"
},
"correctAnswer": "a",
"difficulty": "beginner"
},


{

"question": "11. An IGBT is in ON- state. It is observed that with increasing collector-to-emitter voltage (V<sub>CE</sub>) the collector current (I<sub>C</sub>) is almost constant. Which region is the IGBT operating in?",
"answers": {
"a": "Cutoff",
"b": "Linear",
"c": "Saturation",
"d": "Reverse blocking"
},
"explanations": {
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 3: In saturation mode, the IGBT current remains constant even when Collector-to-emitter voltage is increased.",
"d": "Explanation 4"
},
"correctAnswer": "c",
"difficulty": "beginner"
},

{
"question": "This is a Sample Question 2?",

"question": "12. When compared to MOSFET the time required to turn- OFF an IGBT is?",
"answers": {
"a": "answer1",
"b": "answer2",
"c": "answer3",
"d": "answer4"
"a": "Almost equal",
"b": "Lower",
"c": "Higher",
"d": "Half"
},
"explanations": {
"a": "Explanation 1 <a href='www.google.com'>here</a>",
"a": "Explanation 1",
"b": "Explanation 2",
"c": "Explanation 2",
"d": "Explanation 2"
"c": "Explanation 3: Switching time of IGBT is greater than MOSFET due to the presence of tail current.",
"d": "Explanation 4"
},
"correctAnswer": "c",
"difficulty": "beginner"
}

]
}
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